Product Summary

The FLL57MK is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make the FLL57MK ideally suited for base station applications.

Parametrics

FLL57MK absolute maximum ratings: (1)Drain-Source Voltage: 15 V; (2)Gate-Source Voltage: -5 V; (3)Total Power Dissipation: 21.4 W at TC=25 ℃; (4)Storage Temperature: -65 to +175 ℃; (5)Channel Temperature: 175 ℃.

Features

FLL57MK features: (1)High Output Power: P1dB = 36.0dBm(Typ.); (2)High Gain: G1dB = 11.5dB(Typ.); (3)High PAE: ηdd = 37%(Typ.); (4)Proven Reliability; (5)Hermetic Metal/Ceramic Package.

Diagrams

FLL57MK dimensions