(China (Mainland))
Product Summary
The PHK04P02T is a logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. The PHK04P02T is designed and qualified for use in computing, communications, consumer and industrial applications only. Applications of the PHK04P02T are: Battery powered applications, High-speed digital interfaces.
Parametrics
PHK04P02T absolute maximum ratings: (1)VDS drain-source voltage Tj ≥ 25 ℃; Tj ≤ 150 ℃: -16 V; (2)VDGR drain-gate voltage RGS = 20 kΩ: -16 V; (3)VGS gate-source voltage: -8 to 8 V; (4)ID drain current Tsp = 100 ℃: -1.87 A; (5)Tsp = 25 ℃: -4.66 A; (6)IDM peak drain current Tsp = 25 ℃; pulsed: -26.4 A; (7)Ptot total power dissipation Tsp = 25 ℃: 5 W; (8)Tsp = 100 ℃: 2 W; (9)Tstg storage temperature: -55 to 150 ℃; (10)Tj junction temperature: -55 to 150 ℃.
Features
PHK04P02T features; (1)Suitable for high frequency applications due to fast switching characteristics; (2)Suitable for logic level gate drive sources; (3)Suitable for very low gate drive sources voltage.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 PHK04P02T |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||
 |
PHK04P02T /T3 |
NXP Semiconductors |
MOSFET TAPE13 PWR-MOS |
Data Sheet |
Negotiable |
|
||||||||||
|
PHK04P02T,518 |
NXP Semiconductors |
MOSFET TAPE13 PWR-MOS |
Data Sheet |
|
|
||||||||||
