(China (Mainland))
Product Summary
The BLF2045 is a 30 W LDMOS power transistor for base station applications at frequencies from 1800 to 2200 MHz. The applicaitons of the device include RF power amplifiers for GSM, EDGE, CDMA and W-CDMA base stations and multicarrier applications in the 1800 to 2200 MHz frequency range and Broadcast drivers.
Parametrics
BLF2045 absolute maximum ratings: (1)VDS, drain-source voltage: 65 V; (2)VGS, gate-source voltage:±15 V; (3)ID, drain current (DC): 4.5 A; (4)Tstg, storage temperature: -65 to +150℃; (5)Tj, junction temperature: 200℃.
Features
BLF2045 features: (1)Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA: Output power = 30 W (PEP); Gain = 12.5 dB; Efficiency = 32%; dim = -26 dBc; (2)Easy power control; (3)Excellent ruggedness; (4)High power gain; (5)Excellent thermal stability; (6)Designed for broadband operation (1800 to 2200 MHz); (7)No internal matching for broadband operation.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 BLF2045 |
NXP Semiconductors |
Transistors RF MOSFET Power BULK TNS-RFPR |
Data Sheet |
Negotiable |
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BLF2045,112 |
NXP Semiconductors |
Transistors RF MOSFET Power BULK TNS-RFPR |
Data Sheet |
Negotiable |
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