(China (Mainland))
Product Summary
The BLF242 is a Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range. The transistor BLF242 is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange.
Parametrics
BLF242 absolute maximum ratings: (1)VDS drain-source voltage: - 65 V; (2)±VGS gate-source voltage: - 20 V; (3)ID DC drain current: - 1 A; (4)Ptot total power dissipation up to Tmb = 25 ℃: - 16 W; (5)Tstg storage temperature: -65 150 ℃; (6)Tj junction temperature: - 200 ℃.
Features
BLF242 features: (1)High power gain; (2)Low noise; (3)Easy power control; (4)Good thermal stability; (5)Withstands full load mismatch; (6)Gold metallization ensures excellent reliability.
Diagrams
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 BLF242 |
Other |
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Data Sheet |
Negotiable |
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BLF242,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF DMOS 5W HF-VHF |
Data Sheet |
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BLF2425M6L180P,112 |
NXP Semiconductors |
Transistors RF MOSFET Power 2.4-2.5GHz 65V 12dB |
Data Sheet |
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BLF2425M6L180P,118 |
NXP Semiconductors |
Transistors RF MOSFET Power 2.4-2.5GHz 65V 12dB |
Data Sheet |
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 |
BLF2425M6LS180P,11 |
NXP Semiconductors |
Transistors RF MOSFET Power 2.4-2.5GHz 65V 12dB |
Data Sheet |
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BLF2425M7L140,112 |
NXP Semiconductors |
Transistors RF MOSFET Power 2.45GHz 65V 17.5dB |
Data Sheet |
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BLF2425M7L140,118 |
NXP Semiconductors |
Transistors RF MOSFET Power 2.45GHz 65V 17.5dB |
Data Sheet |
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BLF2425M7L250P,112 |
NXP Semiconductors |
Transistors RF MOSFET Power 2.4-2.5GHz 65V 12dB |
Data Sheet |
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