(China (Mainland))
Product Summary
The FLL120MK is a L-band medium & high power GaAs FET. The FLL120MK is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications.
Parametrics
FLL120MK absolute maximum ratings: (1)Drain-Source Voltage, VDS: 15V; (2)Gate-Source Voltage, VGS: -5V; (3)Total Power Dissipation, PT: 37.5W; (4)Storage Temperature, Tstg: -65 to +175℃; (5)Channel Temperature, Tch: 175℃.
Features
FLL120MK features: (1)High Output Power: P1dB = 40.0dBm (Typ.); (2)High Gain: G1dB = 10.0dB (Typ.); (3)High PAE: nadd = 40% (Typ.); (4)Proven Reliability; (5)Hermetically Sealed Package.
Diagrams
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FLL1200IU-3 |
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FLL1500IU-2C |
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