(China (Mainland))
Product Summary
The PF08107B is a MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone. The applications of the device include Dual band amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz) and For 3.5 V nominal operation.
Parametrics
PF08107B absolute maximum ratings: (1)Supply voltage, Vdd: 8 V; (2)Supply current, Idd GSM 3.5 A; Idd DCS: 2A; (3)Vctl voltage, Vctl: 4 V; (4)Vapc voltage, Vapc: 4 V; (5)Input power, Pin: 10 dBm; (6)Operating case temperature, Tc (op): -30 to +100℃; (7)Storage temperature, Tstg: -30 to +100℃; (8)Output power, PoutGSM: 5W; PoutDCS: 3W.
Features
PF08107B features: (1)2 in / 2 out dual band amplifier; (2)Simple external circuit including output matching circuit; (3)Simple power control; (4)High gain 3stage amplifier : 0 dBm input Typ; (5)Lead less thin & Small package : 8 × 13.75 × 1.6 mm Typ; (6)High efficiency : 50 % Typ at 35.0 dBm for E-GSM 43 % Typ at 32.0 dBm for DCS1800.
Diagrams
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PF08107B |
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