(China (Mainland))
Product Summary
The MRF247 is an NPN silicon rf power transistor. It is designed for 12.5 Volt VHF large–signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.
Parametrics
MRF247 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 18 Vdc; (2)Collector–Base Voltage VCBO: 36 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current — Continuous IC: 20 Adc; (5)Total Device Dissipation @ TC = 25℃ PD: 250 Watts, Derate above 25℃: 1.43 W/℃; (6)Storage Temperature Range Tstg: – 65 to +150 ℃.
Features
MRF247 features: (1)Specified 12.5 Volt, 175 MHz Characteristics, Output Power = 75 Watts, Power Gain = 7.0 dB Min, Efficiency = 55% Min; (2)Characterized With Series Equivalent Large-signal Impedance Parameters; (3)Internal Matching Network Optimized for Minimum Gain Frequency Slope Response Over the Range 136 to 175 MHz; (4)Load Mismatch Capability at Rated Pout and Supply Voltage.
Diagrams
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 MRF247 |
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MRF20060RS |
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