(China (Mainland))
Product Summary
The JAN1N3326B is a high power 50 W Zener diode. It may be operated up to 50 W with adequate mounting and heat sinking with their low thermal resistance. The JAN1N3326B is also available in JAN, JANTX, JANTXV military qualifications. The applications of the JAN1N3326B include Regulates voltage over a broad operating current and temperature range, Standard voltage tolerances are +/- 5% with B suffix, +/-10% with an A suffix, and +/-20% with no suffix, Consult factory for +/-2% or +/-1% with a C or D suffix respectively, Reverse polarity available, Nonsensitive to ESD per MIL-STD-750 Method 1020 and Inherently radiation hard as described in Microsemi MicroNote 050.
Parametrics
JAN1N3326B absolute maximum ratings: (1)Junction & Storage Temperatures: -65℃ to +175℃; (2)DC Power Dissipation: 50 watts at TC < 75℃; (3)Power Derating: 0.5 W/℃ above 75℃; (4)Forward Voltage @ 10 A: 1.5 Volts; (5)THERMAL RESISTANCE: 2.0 ℃/W maximum junction to hexagonal base (1.5 ℃/W typical); (6)Solder temperatures: 260 ℃ for 10 s (max).
Features
JAN1N3326B features: (1)JEDEC registered 1N3305 thru 1N3350B and 1N4549 thru 1N4556B; (2)Internal solder bond construction; (3)Hermetically sealed (welded); (4)Zener Voltage 3.9V to 200V; (5)Also available in JAN, JANTX, and JANTXV qualifications per MIL-PRF-19500/358 by adding the JAN, JANTX, or JANTXV prefixes to part numbers for desired level of screening; (e.g. JANTX1N3305B, JANTXV1N3318B, etc; (6)Standard polarity is anode to case; (7)Reverse polarity with cathode to case by designating R suffix in part number, e.g. 1N3305RB, etc; (8)Consult factory for surface mount equivalents.
Diagrams
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