(China (Mainland))
Product Summary
The JANTX2N2219 is an NPN Switching silicon transistor.
Parametrics
JANTX2N2219 absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 30 Vdc; (2)Collector-Base Voltage, VCBO: 60 Vdc; (3)Emitter-Base Voltage, VEBO: 5.0 Vdc; (4)Collector Current, IC: Total Power Dissipation, PT: 0.8W at TA=25℃; 3.0W at TC=25℃; (5)Operating & Storage Junction Temp. Range, Top, Tstg: -55 to +200℃.
Features
JANTX2N2219 features: (1)Collector-Emitter Breakdown Voltage, V(BR)CEO: 30 Vdc; (2)Emitter-Base Cutoff Current, IEBO: 10μAdc; (3)Collector-Base Cutoff Current, ICES: 10 ηAdc.
Diagrams
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Negotiable |
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