JANTX2N3637

PNP silicon amplifier transistor, TO39, 175Vdc, 1.0 Adc, 1.0W, JANTX2N3637, Microsemi

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Price:: US $1.00~2.00 / piece [Get Latest Price]

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PartNumber:: JANTX2N3637

Brand:: Microsemi Corporation - Microsemi | Pack: TO | D/C: 06+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-03-16

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Product Summary

The JANTX2N3637 is a PNP silicon amplifier transistor.

Parametrics

JANTX2N3637 absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 175Vdc; (2)Collector-Base Voltage, VCBO: 175 Vdc; (3)Emitter-Base Voltage, VEBO: 5.0 Vdc; (4)Collector Current, IC: 1.0 Adc; (5)Total Power Dissipation, PT: 1.0W at Tc=25℃; 5.0W at Tc=25℃; (6)Operating & Storage Junction Temperature Range, TJ, Tstg: -65 to +200℃.

Features

JANTX2N3637 features: (1)Collector-Emitter Breakdown Current, V(BR)CEO: 175 Vdc; (2)Collector-Base Cutoff Current, ICBO: 10μAdc; (3)Emitter-Base Cutoff Current, IEBO: 10μAdc; (4)Collector-Emitter Cutoff Current, ICEO: 10μAdc.