Product Summary

The JANTX2N3637 is a PNP silicon amplifier transistor.

Parametrics

JANTX2N3637 absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 175Vdc; (2)Collector-Base Voltage, VCBO: 175 Vdc; (3)Emitter-Base Voltage, VEBO: 5.0 Vdc; (4)Collector Current, IC: 1.0 Adc; (5)Total Power Dissipation, PT: 1.0W at Tc=25℃; 5.0W at Tc=25℃; (6)Operating & Storage Junction Temperature Range, TJ, Tstg: -65 to +200℃.

Features

JANTX2N3637 features: (1)Collector-Emitter Breakdown Current, V(BR)CEO: 175 Vdc; (2)Collector-Base Cutoff Current, ICBO: 10μAdc; (3)Emitter-Base Cutoff Current, IEBO: 10μAdc; (4)Collector-Emitter Cutoff Current, ICEO: 10μAdc.

Diagrams

JANTX2N3637 package dimensions

JANTX
JANTX

Other


Data Sheet

Negotiable 
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JANTX1N3957

TE Connectivity

General Purpose / Industrial Relays 1000 V DIODE

Data Sheet

0-1: $40.33
1-25: $38.78
25-50: $37.09
50-100: $35.78
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Data Sheet

Negotiable 
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JANTX1N6067A

Other


Data Sheet

Negotiable 
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JANTX1N6101

Other


Data Sheet

Negotiable 
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JANTX1N6762

Other


Data Sheet

Negotiable