(China (Mainland))
Product Summary
The JANTX2N3637 is a PNP silicon amplifier transistor.
Parametrics
JANTX2N3637 absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 175Vdc; (2)Collector-Base Voltage, VCBO: 175 Vdc; (3)Emitter-Base Voltage, VEBO: 5.0 Vdc; (4)Collector Current, IC: 1.0 Adc; (5)Total Power Dissipation, PT: 1.0W at Tc=25℃; 5.0W at Tc=25℃; (6)Operating & Storage Junction Temperature Range, TJ, Tstg: -65 to +200℃.
Features
JANTX2N3637 features: (1)Collector-Emitter Breakdown Current, V(BR)CEO: 175 Vdc; (2)Collector-Base Cutoff Current, ICBO: 10μAdc; (3)Emitter-Base Cutoff Current, IEBO: 10μAdc; (4)Collector-Emitter Cutoff Current, ICEO: 10μAdc.
Diagrams
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TE Connectivity |
General Purpose / Industrial Relays 1000 V DIODE |
Data Sheet |
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