(China (Mainland))
Product Summary
The FLL107ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make FLL107ME ideally suited for base station applications. This device is assembled in hermetic metal/ceramic package.
Parametrics
FLL107ME absolute maximum ratings: (1)Drain-Source Voltage: 15 V; (2)Gate-Source Voltage: -5 V; (3)Total Power Dissipation: 4.16 W at TC=25 ℃; (4)Storage Temperature: -65 to +175℃; (5)Channel Temperature: 175 ℃.
Features
FLL107ME features: (1)High Output Power: P1dB=29.5dBm (Typ.); (2)High Gain: G1dB=13.5dB (Typ.); (3)High PAE: ηdd=47% (Typ.); (4)Proven Reliability; (5)Hermetically Sealed Package.
Diagrams
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FLL1200IU-3 |
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FLL1500IU-2C |
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