Product Summary

The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 50 V dc large signal applications up 250 MHz.

Parametrics

SD2932 absolute maximum ratings: (1)V(BR)DSS, Drain Source Voltage: 125 V; (2)VDGR, Drain-Gate Voltage (RGS = 1MW): 125 V; (3)VGS, Gate-Source Volatge: ±20 V; (4)ID, Drain Current: 40 A; (5)PDISS, Power Dissipation: 500 W; (6)Tj, Max. Operating Junction Temperature: +200 ℃; (7)TSTG, Storage Temperature: -65 to +150 ℃.

Features

SD2932 features: (1)gold metallization; (2)excellent thermal stability; (3)common source configuration, push pull; (4)pout = 300 w min. with 15 db gain @ 175 MHz.

Diagrams

SD2932 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SD2932
SD2932
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $82.88
1-10: $76.05
10-25: $68.25
25-50: $60.45
SD2932B
SD2932B
STMicroelectronics
RF Wireless Misc POWER R.F.
Data Sheet
0-66: $82.46
SD2932BW
SD2932BW
STMicroelectronics
Transistors RF MOSFET Power HF/VHF/UHF RF N-Ch 300W 15dB 175MHz
Data Sheet
0-35: $155.36
SD2932W
SD2932W
STMicroelectronics
Transistors RF MOSFET Power N-Ch MOS HF/VHF/ RF 300W 15dB 175MHz
Data Sheet
0-1: $87.88
1-10: $82.46